After many years of promise as a high temperature semiconductor, silicon carbide (SiC) is finally emerging as a useful electronic material. Recent significant progress that has led to this emergence has been in the areas of crystal growth and device fabrication technology. High quality single-crystal SiC wafers, up to 25 mm in diameter, can now be produced routinely from boules grown by a high temperature (2700 K) sublimation process. Device fabrication processes, including chemical vapor deposition (CVD), in situ doping during CVD, reactive ion etching, oxidation, metallization, etc. have been used to fabricate p-n junction diodes and MOSFETs. The diode was operated to 870 K and the MOSFET to 770 K.
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机译：经过多年作为高温半导体的承诺，碳化硅（SiC）终于成为一种有用的电子材料。导致这种出现的最近的重大进展是在晶体生长和器件制造技术领域。现在，可以通过高温（2700 K）升华工艺生长的球团按常规生产直径最大为25 mm的高质量单晶SiC晶片。包括化学气相沉积（CVD），CVD期间的原位掺杂，反应性离子蚀刻，氧化，金属化等器件制造工艺已用于制造p-n结二极管和MOSFET。二极管的工作电压为870 K，MOSFET的工作电压为770 K.
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